Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD

Effect of spacer layer design between InP emitter and GaAsSb base in InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) grown by MOCVD was investigated. A very thin tensile-strained GaAs layer, or a thin GaInP layer, or combination of both was inserted between InP emitter and GaAsSb ba...

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Bibliographic Details
Published in:Physica scripta 2024-05, Vol.99 (5), p.55914
Main Authors: Liu, Zhen, Zhu, Hong, Deng, ShuQing, Pan, XinYi, Huang, Yong
Format: Article
Language:English
Subjects:
carrier transport
current gain
double heterojunction bipolar transistors (DHBTs)
GaAs
GaInP
InP/GaAsSb
MOCVD
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Summary:Effect of spacer layer design between InP emitter and GaAsSb base in InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) grown by MOCVD was investigated. A very thin tensile-strained GaAs layer, or a thin GaInP layer, or combination of both was inserted between InP emitter and GaAsSb base to mitigate Sb segregation and/or eliminate electron pile-up between emitter and base. With a base sheet resistances of ∼1800 ohm sq −1 for all devices, DHBTs with a GaAs spacer, a GaInP spacer and the combination demonstrate a current gain of 24, 49 and 64, respectively. The conduct band discontinuity Δ Ec at InP/GaAsSb interfaces and the current blocking effect are effectively eliminated by employing the combination of GaAs and GaInP layers.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ad3509