Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have emerged as promising biosensors, leveraging the unique properties of inter-channel coupling. This paper investigates the influence of mole fraction variations in the AlGaN layer on inter-channel coupling and explores its impl...

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Bibliographic Details
Published in:Physica scripta 2024-08, Vol.99 (8), p.85037
Main Authors: Kanrar, Sharmistha Shee, Sarkar, Subir Kumar
Format: Article
Language:English
Subjects:
2DEG
C-ERB2 sensor
double channel HEMT (DC HEMT) biosensor
quantization
quantum well
sensitivity
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Summary:AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have emerged as promising biosensors, leveraging the unique properties of inter-channel coupling. This paper investigates the influence of mole fraction variations in the AlGaN layer on inter-channel coupling and explores its implications for C-ERB2 biosensing. The study reveals the potential of inter-channel coupling to enhance sensitivity in biosensing applications, particularly for detecting C-ERB2, a crucial protein associated with various cancers. The device architecture, simulation models, electrostatics, and sensitivity analysis are comprehensively examined. The findings underscore the significance of inter-channel coupling in optimizing biosensor performance, offering valuable insights for the advancement of biosensing technologies.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ad6047