Performance optimization of MA 0.5 FA 0.5 PbI 3 /CsPbI 3 based hybrid perovskite solar cell emphasizing on double absorber layer

• Published in: Physica scripta 2024-12, Vol.99 (12), p.125504
• Main Authors: Kaur, Jaspinder, Garg, Sidharth, Basu, Rikmantra, Sharma, Ajay Kumar, Pandey, Rahul, Madan, Jaya, Saddullah, Md
• Format: Article
• Language: English
• ISSN: 0031-8949; 1402-4896
• DOI: 10.1088/1402-4896/ad86f8

The utilization of cesium-based lead halide (CsPbI 3 ) PSC has considerable potential in the photovoltaic industry due to their high efficiency, underpinned by features such as a high absorption coefficient, thermal stability, and commendable efficiency. Nevertheless, the bandgap of CsPbI 3 , standing at 1.7 eV, poses a challenge as it is relatively high for a single-junction device. To overcome this limitation, we introduced a dual absorber layer structure by interleaving CsPbI 3 with a lead-based hybrid perovskite material, denoted as MA 0.5 FA 0.5 PbI 3 . This investigation focused on the MA 0.5 FA 0.5 PbI 3 /CsPbI 3 hetero-junction structure to ascertain the maximum possible efficiency. Therefore, this study proposed a PSC with the configuration of Ag/MoO 3 /MA 0.5 FA 0.5 PbI 3 /CsPbI 3 /IGZO/Au. In this setup, MoO 3 (Molybdenum Trioxide) is used as the HTL and IGZO (Indium Gallium Zinc Oxide) as the ETL. Silver (Ag) serves as the back contact and gold (Au) is the front contact. This device demonstrated remarkable characteristics with V oc  = 1.307 V, J sc  = 22.71 mA cm −2 , FF = 86.58%, and η  = 26.21%, showcasing a substantial improvement compared to previously reported CsPbI 3 -based homojunction PSCs. Furthermore, this study delved into the effects of absorber doping, absorber material thickness, bulk defect, and interfacial defects on solar cell parameters to obtain high-performance solar cells.