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Corrigendum: Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion (2018 Laser Phys. 28 055401)

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Published in:Laser physics 2020-04, Vol.30 (4), p.49501
Main Authors: Rong, Youying, Ma, Jianhui, Chen, Lingxiao, Liu, Yan, Siyushev, Petr, Wu, Botao, Pan, Haifeng, Jelezko, Fedor, Wu, E, Zeng, Heping
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container_issue 4
container_start_page 49501
container_title Laser physics
container_volume 30
creator Rong, Youying
Ma, Jianhui
Chen, Lingxiao
Liu, Yan
Siyushev, Petr
Wu, Botao
Pan, Haifeng
Jelezko, Fedor
Wu, E
Zeng, Heping
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doi_str_mv 10.1088/1555-6611/ab792e
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title Corrigendum: Excited-state lifetime measurement of silicon vacancy centers in diamond by single-photon frequency upconversion (2018 Laser Phys. 28 055401)
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