Characterization of ZnO nanowire field-effect transistors exposed to ultraviolet radiation

A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5 min, the radiation intensity increases to 5.1 *mW/cm2, while the saturation drain current (Idss) of...

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Bibliographic Details
Published in:Chinese physics B 2009-11, Vol.18 (11), p.5020-5023, Article 5020
Main Authors: Ming, Li, Hai-Ying, Zhang, Chang-Xin, Guo, Jing-Bo, Xu, Xiao-Jun, Fu, Pu-Feng, Chen
Format: Article
Language:English
Subjects:
Channels
Devices
Direct current
Drains
Electrical resistivity
Exposure
Irradiation
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Saturation
Semiconductor devices
Transistors
Ultraviolet radiation
Zinc oxide
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Summary:A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5 min, the radiation intensity increases to 5.1 *mW/cm2, while the saturation drain current (Idss) of the nanowire FET decreases sharply from 560 to 320 nA. The field effect mobility (*m) of the ZnO nanowire FET drops from 50.17 to 23.82 cm2/(V*s) at VDS = 2.5 V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5 *mW/cm2, the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20 min are almost the same); in particular, the Idss of NW FET only reduces by about 50 nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/11/067