Thermal effect mechanism of magnetoresistance p-type diamond films

Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p...

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Bibliographic Details
Published in:Chinese physics B 2010-11, Vol.19 (11), p.633-636, Article 117501
Main Author: 秦国平 孔春阳 阮海波 黄桂娟 崔玉亭 方亮
Format: Article
Language:English
Subjects:
温度变化
热效应
电离能
磁电阻
能量水平
金刚石薄膜
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Summary:Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films （Corbino discs）. It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/11/117501