The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength be...

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Bibliographic Details
Published in:Chinese physics B 2010-11, Vol.19 (11), p.653-657
Main Author: 胡晓龙 张江勇 尚景智 刘文杰 张保平
Format: Article
Language:English
Subjects:
GaN
低温光致发光
单量子阱
声子耦合
氮化铟镓
纵光学声子
覆盖层厚度
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Summary:This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence （PL） measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal- optical （LO） phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/11/117801