Investigation of resistive switching behaviours in WO 3 -based RRAM devices

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Bibliographic Details
Published in:Chinese physics B 2011-01, Vol.20 (1), p.17305
Main Authors: Li, Ying-Tao, Long, Shi-Bing, Lü, Hang-Bing, Liu, Qi, Wang, Qin, Wang, Yan, Zhang, Sen, Lian, Wen-Tai, Liu, Su, Liu, Ming
Format: Article
Language:English
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ISSN:1674-1056
DOI:10.1088/1674-1056/20/1/017305