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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
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Published in: | Chinese physics B 2011-03, Vol.20 (3), p.033301 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/20/3/033301 |