Flat-band voltage shift in metal-gate/high-k/Si stacks

In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer....

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Bibliographic Details
Published in:Chinese physics B 2011-09, Vol.20 (9), p.381-391
Main Author: 黄安平 郑晓虎 肖志松 杨智超 王玫 朱剑豪 杨晓东
Format: Article
Language:English
Subjects:
Devices
Electric potential
met
Origins
Oxides
PMOS
Silicon
Stacks
Trends
Voltage
平带电压
技术节点
栈
漂移
移位现象
超薄氧化层
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Summary:In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/9/097303