Experimental clarification of orientation dependence of germanium PMOSFETs with Al 2 O 3 /GeO x /Ge gate stack

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Bibliographic Details
Published in:Chinese physics B 2014-11, Vol.23 (11), p.118506
Main Authors: Yun, Quan-Xin, Li, Ming, An, Xia, Lin, Meng, Liu, Peng-Qiang, Li, Zhi-Qiang, Zhang, Bing-Xin, Xia, Yu-Xuan, Zhang, Hao, Zhang, Xing, Huang, Ru, Wang, Yang-Yuan
Format: Article
Language:English
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ISSN:1674-1056
DOI:10.1088/1674-1056/23/11/118506