Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs

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Bibliographic Details
Published in:Chinese physics B 2016-10, Vol.25 (10), p.108501
Main Authors: Sun, Shu-Xiang, Ji, Hui-Fang, Yao, Hui-Juan, Li, Sheng, Jin, Zhi, Ding, Peng, Zhong, Ying-Hui
Format: Article
Language:English
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ISSN:1674-1056
DOI:10.1088/1674-1056/25/10/108501