High-performance germanium n＋/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm~2at -1 V bias. The Ni-...

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Bibliographic Details
Published in:Chinese physics B 2016-05, Vol.25 (5), p.312-315
Main Author: 黄巍 陆超 余珏 魏江镔 陈超文 汪建元 徐剑芳 王尘 李成 陈松岩 刘春莉 赖虹凯
Format: Article
Language:English
Subjects:
MOSFET
低温
制备方法
性能
活化工艺
磷掺杂
金属诱导
镍电极
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Summary:High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm~2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/5/057304