Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing

InGaN layers capped with GaN were annealed at 550℃ for 1 hour. During annealing, cracks appeared and dissolved In GaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to...

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Bibliographic Details
Published in:Chinese physics B 2017-11, Vol.26 (11), p.420-423
Main Authors: 薛俊俊, 蔡青, 张保花, 葛梅, 陈敦军, 智婷, 陈将伟, 汪联辉, 张荣, 郑有炓
Format: Article
Language:English
Subjects:
InGaN
离子辐照
穿透裂纹
立方氮化硼
结构表征
退火过程
铟
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Summary:InGaN layers capped with GaN were annealed at 550℃ for 1 hour. During annealing, cracks appeared and dissolved In GaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/11/116801