Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact...

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Bibliographic Details
Published in:Chinese physics B 2017, Vol.26 (1), p.542-546
Main Author: 潘霄宇 郭红霞 罗尹虹 张凤祁 丁李利 魏佳男 赵雯
Format: Article
Language:English
Subjects:
CMOS
displacement damage
neutron irradiation
single event latchup
SRAM
TCAD simulation
中子辐照
位移
单粒子
少数载流子寿命
损伤
灵敏度
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Summary:Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/018501