Low-temperature phase transformation of CZTS thin films

• Published in: Chinese physics B 2017-04, Vol.26 (4), p.325-329
• Main Author: 赵蔚 杜霖元 刘林林 孙亚利 柳志伟 滕晓云 谢娟 刘匡 于威 傅广生 高超
• Format: Article
• Language: English
• Subjects: 低温相变; 低温退火; 拉曼光谱; 拉曼分析; 拉曼散射; 样品制备; 激光退火; 薄膜结构
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/26/4/046402

The low temperature phase transformation in the Cu_2ZnSnS_4（CZTS） films was investigated by laser annealing and low temperature thermal annealing.The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite（KS） structure and promotes the formation of the partially disordered kesterite（PD-KS） structure in the CZTS films,and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region.Moreover,the above two processes were reversible.The Raman analyses of the CZTS samples prepared under different process show that the PD-KS structure tends to be found at low temperatures and low sulfur vapor pressures.Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films.