An investigation of ionizing radiation damage in different SiGe processes

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explic...

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Bibliographic Details
Published in:Chinese physics B 2017-08, Vol.26 (8), p.551-556
Main Author: 李培 刘默寒 贺朝会 郭红霞 张晋新 马婷
Format: Article
Language:English
Subjects:
HBT
IBM
SiGe
器件设计
工艺制造
影响因素
数值模拟
电离辐射损伤
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Summary:Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO2 interface and the isolation structure could be contributing to the different ionizing radiation damage.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/088503