Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InA...

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Bibliographic Details
Published in:Chinese physics B 2017-08, Vol.26 (8), p.565-568
Main Author: 徐建星 李金伦 魏思航 马奔 张翼 张宇 倪海桥 牛智川
Format: Article
Language:English
Subjects:
InGaAs
PCAS
优化
光导
天线
太赫兹
宽带
面型
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Summary:A mesa-type enhanced InGaAs/InAIAs multilayer heterostructure （MLHS） terahertz photoconductive antenna （PCA） at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAIAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAIAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/088702