Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and...

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Bibliographic Details
Published in:Chinese physics B 2017-08, Vol.26 (9), p.389-395
Main Author: 刘艳 林兆军 吕元杰 崔鹏 付晨 韩瑞龙 霍宇 杨铭
Format: Article
Language:English
Subjects:
HFET
光子晶体光纤
寄生电源
异质结场效应晶体管
极化电荷
温度范围
电阻
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Summary:The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/9/097104