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Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

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Bibliographic Details
Published in:Chinese physics B 2019-08, Vol.28 (8), p.87302
Main Authors: Huo, Wenxing, Mei, Zengxia, Lu, Yicheng, Han, Zuyin, Zhu, Rui, Wang, Tao, Sui, Yanxin, Liang, Huili, Du, Xiaolong
Format: Article
Language:English
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/28/8/087302