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Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
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Published in: | Chinese physics B 2019-08, Vol.28 (8), p.87302 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/28/8/087302 |