Strain-tunable electronic and optical properties of h-BN/BC 3 heterostructure with enhanced electron mobility

By using first-principles calculation, we study the properties of h-BN/BC 3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC 3 has good dynamical stability and ultrahigh stiffness, enhanced e...

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Bibliographic Details
Published in:Chinese physics B 2021-07, Vol.30 (7), p.76801
Main Authors: Jiao, Zhao-Yong, Wang, Yi-Ran, Guo, Yong-Liang, Ma, Shu-Hong
Format: Article
Language:English
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Summary:By using first-principles calculation, we study the properties of h-BN/BC 3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC 3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC 3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast, applying an external strain can mildly modulate the electronic band structure of h-BN/BC 3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC 3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties.
ISSN:1674-1056
DOI:10.1088/1674-1056/abe29d