Resistive switching properties of SnO 2 nanowires fabricated by chemical vapor deposition

• Published in: Chinese physics B 2023-08, Vol.32 (9), p.97302
• Main Authors: Chen, Ya-Qi, Tang, Zheng-Hua, Jiang, Chun-Zhi, Xu, De-Gao
• Format: Article
• Language: English
• ISSN: 1674-1056
• DOI: 10.1088/1674-1056/acc3fd

Resistive switching (RS) devices have great application prospects in the emerging memory field and neuromorphic field, but their stability and unclear RS mechanism limit their relevant applications. In this work, we construct a hydrogenated Au/SnO 2 nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the I on / I off ratio increases from 20 to 10 4 when the read voltage decreases from 3.1 V to −1 V under the condition of electric field. Moreover, the rectification ratio can reach as high as 10 4 owing to oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO 2 NW/Au device. Our results provide a strategy for designing high-performance memristive devices based on SnO 2 NWs.