W-doped In 2 O 3 nanofiber optoelectronic neuromorphic transistors with synergistic synaptic plasticity

Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In 2 O 3 nanofibers as the cha...

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Published in:Chinese physics B 2023-10, Vol.32 (11), p.118101
Main Authors: Yang 杨, Yang 洋, Fu 傅, Chuanyu 传玉, Ke 柯, Shuo 硕, Cui 崔, Hangyuan 航源, Fang 方, Xiao 晓, Wan 万, Changjin 昌锦, Wan 万, Qing 青
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Language:English
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Summary:Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper, neuromorphic transistors with W-doped In 2 O 3 nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current (EPSC), long-term potentiation (LTP), and depression (LTD). Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse. At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5 × 5 nanofiber device array. Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/acdeda