Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

• Published in: Chinese physics B 2023-12, Vol.32 (12), p.128505-42
• Main Authors: Zhao, Yuehao, Sun, Haoran, Sheng, Zhe, Zhang, David Wei, Zhou, Peng, Zhang, Zengxing
• Format: Article
• Language: English
• Subjects: ambipolar semiconductor; semiconductor device; two-dimensional material
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ad08a5

In these days, the increasing massive data are being produced and demanded to be processed with the rapid growth of information technology. It is difficult to rely solely on the shrinking of semiconductor devices and scale-up of the integrated circuits (ICs) again in the foreseeable future. Exploring new materials, new-principle semiconductor devices and new computing architectures is becoming an urgent topic in this field. Ambipolar two-dimensional (2D) semiconductors, possessing excellent electrostatic field controllability and flexibly modulated major charge carriers, offer a possibility to construct reconfigurable devices and enable the ICs with new functions, showing great potential in computing capacity, energy efficiency, time delay and cost. This review focuses on the recent significant advancements in reconfigurable electronic and optoelectronic devices of ambipolar 2D semiconductors, and demonstrates their potential approach towards ICs, like reconfigurable circuits and neuromorphic chips. It is expected to help readers understand the device design principle of ambipolar 2D semiconductors, and push forward exploring more new-principle devices and new-architecture computing circuits, and even their product applications.