Structure, ferroelectric, and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu 1/2 Ti 1/2 )O 3 –PbTiO 3

• Published in: Chinese physics B 2024-05, Vol.33 (5), p.57701
• Main Authors: Song 宋, Wei-Bin 伟宾, Xi 席, Guo-Qiang 国强, Pan 潘, Zhao 昭, Liu 刘, Jin 锦, Ye 叶, Xu-Bin 旭斌, Liu 刘, Zhe-Hong 哲宏, Wang 王, Xiao 潇, Shan 单, Peng-Fei 鹏飞, Zhang 张, Lin-Xing 林兴, Lu 鲁, Nian-Peng 年鹏, Fan 樊, Long-Long 龙龙, Qin 秦, Xiao-Mei 晓梅, Long 龙, You-Wen 有文
• Format: Article
• Language: English
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ad2a71

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties. New Bi-based perovskite thin films Bi(Cu 1/2 Ti 1/2 )O 3 –PbTiO 3 (BCT–PT) are deposited on Pt(111)/Ti/SiO 2 /Si substrates in the present study by the traditional sol–gel method. Their structures and related ferroelectric and fatigue characteristics are studied in-depth. The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure, besides, they have a predominant (100) orientation together with a dense and homogeneous microstructure. The remnant polarization (2 P r ) values at 30 μC/cm 2 and 16 μC/cm 2 are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films, respectively. More intriguingly, although the polarization values are not so high, 0.2BCT–0.8PT thin films show outstanding polarization fatigue properties, with a high switchable polarization of 93.6% of the starting values after 10 8 cycles, indicating promising applications in ferroelectric memories.