Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

• Published in: Chinese physics B 2024-08, Vol.33 (9), p.98701
• Main Authors: Chen 陈, S X 思学, Chen 陈, M M 明明, Liu 刘, Y 圆, Cao 曹, D W 大威, Chen 陈, G J 国杰
• Format: Article
• Language: English
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ad4ff4

Ferroelectric HfO 2 has attracted much attention owing to its superior ferroelectricity at an ultra-thin thickness and good compatibility with Si-based complementary metal–oxide–semiconductor (CMOS) technology. However, the crystallization of polar orthorhombic phase (o-phase) HfO 2 is less competitive, which greatly limits the ferroelectricity of the as-obtained ferroelectric HfO 2 thin films. Fortunately, the crystallization of o-phase HfO 2 can be thermodynamically modulated via interfacial stress engineering. In this paper, the growth of improved ferroelectric Al doped HfO 2 (HfO 2 :Al) thin films on (111)-oriented Si substrate has been reported. Structural analysis has suggested that nonpolar monoclinic HfO 2 :Al grown on (111)-oriented Si substrate suffered from a strong compressive strain, which promoted the crystallization of (111)-oriented o-phase HfO 2 in the as-grown HfO 2 :Al thin films. In addition, the in-plane lattice of (111)-oriented Si substrate matches well with that of (111)-oriented o-phase HfO 2 , which further thermally stabilizes the o-phase HfO 2 . Accordingly, an improved ferroelectricity with a remnant polarization (2 P r ) of 26.7 μC/cm 2 has been obtained. The results shown in this work provide a simple way toward the preparation of improved ferroelectric HfO 2 thin films.