High-temperature characteristics of Al x Ga 1− x N/GaN Schottky diodes

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Bibliographic Details
Published in:Journal of semiconductors 2009-03, Vol.30 (3), p.34001
Main Authors: Xiaoling, Zhang, Fei, Li, Changzhi, Lü, Xuesong, Xie, Ying, Li, N, Mohammad S
Format: Article
Language:English
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ISSN:1674-4926
DOI:10.1088/1674-4926/30/3/034001