Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential...

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Bibliographic Details
Published in:Journal of semiconductors 2010-04, Vol.31 (4), p.20-24
Main Author: 张雍 杨建红 蔡雪原 汪再兴
Format: Article
Language:English
Subjects:
OSIT
偏置电压
势垒高度
数值计算
无机/有机
规范化方法
计算结果
静电感应晶体管
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Summary:The exponential dependence of the potential barrier height Фc on the biased voltages of the inorganic/organic static induction transistor （SIT/OSIT） through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of Фc on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description Of Фc can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics.
ISSN:1674-4926
DOI:10.1088/1674-4926/31/4/044002