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A novel SOI MOSFET electrostatic field sensor
A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOl MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the elec...
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Published in: | Journal of semiconductors 2010-04, Vol.31 (4), p.68-71 |
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Main Author: | |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | A novel low temperature solid state electric field sensor is demonstrated as a promising sensor. The sensor is a type of constant voltage Wheatstone bridge whose resistors are four direct gate SOl MOSFET devices. It is demonstrated in theory that the output voltage signal is proportional to the electric field E, the temperature drift is about zero when the temperature is in the range from 200 to 400 K, and the doping concentration is in the range from 1 × 10^14 to 1 × 10^16 cm^-3. The experiment results indicate that the resolution of the sensor is about 3.27 mV for a 1000 V/m electric field at 300 K, and the voltage drift by an amount is about 47 V/m field signal when the degree temperature is in the range from 300 to 370 K, which is much smaller than the current drift of a single MOSFET which is about 10000 V/m field signal. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/31/4/045003 |