A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer （MMI） cavity was designed and demonstrated. An output power as high as 32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity, being much higher than the 9.8 mW outp...

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Bibliographic Details
Published in:Journal of semiconductors 2011-05, Vol.32 (5), p.66-69
Main Author: 赖伟江 程远兵 姚辰 周代兵 边静 赵玲娟 伍剑
Format: Article
Language:English
Subjects:
Diodes
Holes
Interferometers
Laser diodes
Lasers
MMI
Ridges
Semiconductor lasers
Semiconductors
半导体激光二极管
多模干涉
最大输出功率
物质结构
级联
锥形
高功率
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Description
Summary:A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer （MMI） cavity was designed and demonstrated. An output power as high as 32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity, being much higher than the 9.8 mW output power of the conventional single ridge F-P laser with the same material structure and the same device length due to the larger active area; and also being higher than the 21.2 mW output power of the rectangular and cascaded active MMI laser diode with nearly the same structure, except for the shape of the MMI area. In addition, the tapered and cascaded active multimode interferometer laser showed stable single mode outputs up to the maximum output power.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/5/054007