A THz InGaAs/InP double heterojunction bipolar transistor with f max = 325 GHz and BV CBO = 10.6 V

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Bibliographic Details
Published in:Journal of semiconductors 2013-05, Vol.34 (5), p.54006
Main Authors: Cheng, Wei, Wang, Yuan, Zhao, Yan, Lu, Haiyan, Gao, Hanchao, Yang, Naibin
Format: Article
Language:English
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ISSN:1674-4926
DOI:10.1088/1674-4926/34/5/054006