Impact of barrier thickness on gate capacitance--modeling and comparative analysis of GaN based MOSHEMTs

A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AIInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AIInN/GaN MOSHEMTs...

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Bibliographic Details
Published in:Journal of semiconductors 2015-03, Vol.36 (3), p.60-64
Main Authors: Jena, Kanjalochan, Swain, Raghunandan, Lenka, T. R.
Format: Article
Language:English
Subjects:
2DEG
AlGaN
Aluminum gallium nitrides
Aluminum nitride
Barriers
CAD仿真
Capacitance
Gallium nitrides
GaN
Gates
Mathematical models
MOSHEMT
quantum capacitance
Semiconductors
TCAD
厚度
屏障
建模
数学模型
栅极
电容
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Summary:A mathematical model is developed predicting the behavior of gate capacitance with the nanoscale variation of barrier thickness in AlN/GaN MOSHEMT and its effect on gate capacitances of AIInN/GaN and AlGaN/GaN MOSHEMTs through TCAD simulations is compared analytically. AlN/GaN and AIInN/GaN MOSHEMTs have an advantage of a significant decrease in gate capacitance up to 108 fF/μm^2 with an increase in barrier thickness up to 10 nm as compared to conventional AlGaN/GaN MOSHEMT. This decrease in gate capacitance leads to improved RF performance and hence reduced propagation delay.
ISSN:1674-4926
DOI:10.1088/1674-4926/36/3/034003