Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate...

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Bibliographic Details
Published in:Journal of semiconductors 2017-07, Vol.38 (7), p.53-59
Main Authors: Li, Weiyi, Zhang, Zhili, Fu, Kai, Yu, Guohao, Zhang, Xiaodong, Sun, Shichuang, Song, Liang, Hao, Ronghui, Fan, Yaming, Cai, Yong, Zhang, Baoshun
Format: Article
Language:English
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Summary:We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs(from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field.
ISSN:1674-4926
DOI:10.1088/1674-4926/38/7/074001