Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

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Bibliographic Details
Published in:Journal of semiconductors 2018-11, Vol.39 (11), p.113001
Main Authors: Lin, Shaoming, Ke, Shaoying, Ye, Yujie, Huang, Donglin, Wu, Jinyong, Chen, Songyan, Li, Cheng, Wang, Jianyuan, Huang, Wei
Format: Article
Language:English
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ISSN:1674-4926
DOI:10.1088/1674-4926/39/11/113001