Study of electrophysical properties of metal-semiconductor contact by the theory of complex systems

The purpose of this work is to analyze the electrical properties of the metal-semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal-semiconductor contact surface i...

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Bibliographic Details
Published in:Journal of semiconductors 2020-10, Vol.41 (10), p.102101-20
Main Authors: Askerov, Sh. G., Abdullayeva, L. K., Hasanov, M. G.
Format: Article
Language:English
Subjects:
complex systems
current-voltage characteristics
heterogeneity
interfaces
metal-semiconductor contact
Schottky diode
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Summary:The purpose of this work is to analyze the electrical properties of the metal-semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal-semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system, which consists of parallel connected numerous elementary contacts having different properties and parameters.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/10/102101