Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blu...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductors 2020-12, Vol.41 (12), p.122101-6
Main Authors: Ning, Dandan, Chen, Yanan, Li, Xinkun, Liang, Dechun, Ma, Shufang, Jin, Peng, Wang, Zhanguo
Format: Article
Language:English
Subjects:
photoluminescence
quantum dots
rapid thermal annealing
spectral width
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 °C. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state (GS) of different-sized InAs QDs, the InAs wetting layer (WL) and the In0.15Ga0.85As strain reduction layer (SRL) in the epitaxial InAs/GaAs layers.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/12/122101