Photo-induced doping effect and dynamic process in monolayer MoSe 2

Dynamic processes of electron transfer by optical doping in monolayer MoSe 2 at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of t − α with α = 0.1...

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Bibliographic Details
Published in:Journal of semiconductors 2020-08, Vol.41 (8), p.82004
Main Authors: Yang, Qian, Xue, Yongzhou, Chen, Hao, Dou, Xiuming, Sun, Baoquan
Format: Article
Language:English
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Summary:Dynamic processes of electron transfer by optical doping in monolayer MoSe 2 at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of t − α with α = 0.1–0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 μ W. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/41/8/082004