High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μ m mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW...

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Bibliographic Details
Published in:Journal of semiconductors 2022-01, Vol.43 (1), p.12302
Main Authors: Zhuravlev, K. S., Chizh, A. L., Mikitchuk, K. B., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S.
Format: Article
Language:English
Subjects:
InAlAs/InGaAs heterostructures
microwave photodiodes
microwave photonics
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Summary:The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μ m mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.
ISSN:1674-4926
2058-6140
DOI:10.1088/1674-4926/43/1/012302