Cluster incorporation control for a-Si:H film deposition

To study the effects of clusters on the light induced degradation and control their deposition into films, we have developed a multi-hollow plasma CVD method by which the incorporation of clusters is reduced in the upstream region using the gas flow that drives clusters formed in discharges toward t...

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Bibliographic Details
Published in:Journal of physics. Conference series 2008-03, Vol.100 (8), p.082018
Main Authors: Nakamura, W M, Miyahara, H, Koga, K, Shiratani, M
Format: Article
Language:English
Subjects:
Clusters
Deposition
Gas flow
Photodegradation
Physics
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Summary:To study the effects of clusters on the light induced degradation and control their deposition into films, we have developed a multi-hollow plasma CVD method by which the incorporation of clusters is reduced in the upstream region using the gas flow that drives clusters formed in discharges toward the downstream region of the reactor. Thus, we can simultaneously deposit films in which the volume fraction of clusters incorporated into films varies by changing the position of the substrate in the reactor. A-Si:H films with a lower volume fraction of clusters tend to show better stability against light exposure.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/100/8/082018