Influence of the rapid thermal annealing on the properties of a-C:H/c-Si structures

The influence of rapid thermal annealing (RTA) on the properties of a-C: H/c-Si (p-type) structures was investigated. The carbon layers were deposited by plasma enhanced CVD at substrate temperature of 340°C from methanol (CH3OH) vapor. The C-V and I-V measurements of the a-C: H/Si structures showed...

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Bibliographic Details
Published in:Journal of physics. Conference series 2008-05, Vol.113 (1), p.012013
Main Authors: Georgiev, S, Szekeres, A, Vlaikova, E, Beshkov, G, Sueva, D, Manolov, E
Format: Article
Language:English
Subjects:
Annealing
Carbon
Interlayers
P-n junctions
Photovoltaic cells
Physics
Plasma enhanced chemical vapor deposition
Radioactivity
Schottky diodes
Substrates
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Summary:The influence of rapid thermal annealing (RTA) on the properties of a-C: H/c-Si (p-type) structures was investigated. The carbon layers were deposited by plasma enhanced CVD at substrate temperature of 340°C from methanol (CH3OH) vapor. The C-V and I-V measurements of the a-C: H/Si structures showed that a p-n junction is formed on the silicon surface after RTA and the structures behave as a Schottky diode. The formation of a thin SiC interlayer by 1000 and 1200°C RTA was proven by the corresponding optical constants obtained from the ellipsometric measurements after RTA and subsequent carbon removal in HF acid.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/113/1/012013