Bandgap engineering of InAs/InGaAlAs quantum dashes-in-well laser structures: a surface photovoltage spectroscopy study

Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal...

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Bibliographic Details
Published in:Journal of physics. Conference series 2008-05, Vol.113 (1), p.012033
Main Authors: Ivanov, T, Donchev, V, Bachev, K, Ding, Y-H, Wang, Y, Djie, H S, Ooi, B S
Format: Article
Language:English
Subjects:
Energy gap
Indium arsenides
Ion implantation
Nitrogen ions
Optical transition
Photoluminescence
Physics
Quantum wells
Room temperature
Spectroscopic analysis
Spectrum analysis
Substrates
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Summary:Room temperature surface photovoltage (SPV) spectroscopy is used to study the interband optical transitions and intermixing processes in InAs quantum-dash-in-InAlGaAs quantum-well structures grown on InP substrates. The intermixing is performed by nitrogen ion implantation followed by rapid thermal annealing at 700°C in nitrogen ambient. The effect of group-III intermixing to the interband optical transition energies in the structures is revealed by SPV spectroscopy and the results are confirmed by photoluminescence measurements. A differential bandgap blueshift as large as 93 meV (176 nm) is observed in the intermixed sample compared to the as grown one. The SPV investigation confirms that this intermixing technique is a powerful tool for achieving the required wavelength of 1.55 μm for telecommunication applications.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/113/1/012033