Inhomogeneous magnetization of a thin film of a ferromagnetic semiconductor in an electric field

A theoretical model describing the spontaneous magnetization of a ferromagnetic semiconductor (InMn)As film in the presence of an external electric field directed across the film is considered. It is assumed that the ions of a manganese impurity with spin 5/2 are acceptors, have a uniform spatial di...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-02, Vol.1163 (1), p.12077
Main Author: Chetverikov, V M
Format: Article
Language:English
Subjects:
Electric fields
Ferromagnetic materials
Film thickness
Magnetization
Manganese ions
Phase transitions
Spatial distribution
Thin films
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Summary:A theoretical model describing the spontaneous magnetization of a ferromagnetic semiconductor (InMn)As film in the presence of an external electric field directed across the film is considered. It is assumed that the ions of a manganese impurity with spin 5/2 are acceptors, have a uniform spatial distribution inside the semiconductor, and do not change their position under the action of an external field. The motion of holes with spin ½ changes their spatial distribution under the action of the field. The exchange interaction between manganese ions and holes allows the formation of magnetization that is non-uniform across the film thickness. In particular, the existence of a piecewise continuous solution describing the presence of a phase transition boundary for magnetization inside a ferromagnetic semiconductor film is shown.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1163/1/012077