The effect of thermal cycling on the properties of VO 2±Y materials

• Published in: Journal of physics. Conference series 2019-08, Vol.1260 (6), p.62022
• Main Authors: Semenyuk, N A, Surikov, Vad I, Kuznetsova, Y V, Surikov, Val I, Volkova, V K
• Format: Article
• Language: English
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/1260/6/062022

The article presents the research results of the thermal cycling influence on the ratio of the ultimate composition, chemical state and electrical resistance of VO 2±Y system materials. It is established that for all VO 2±Y system materials a phase transition semiconductor-metal (PTSM) is observed at temperature of ∼ 340 K, accompanied by a sharp change in electrical resistance both before and after thermal cycling. Despite the fact that PTMD retained after thermal cycling, the resistivity jump Δ ln(R/R 0 ) at PTMD for all test materials decreases, the transition temperature becomes more diffused. It is shown that after a series of 30 thermal cycles, the ratio of the surface ultimate composition of all the materials under study changes to a decrease in the oxygen content. Minimal changes in properties as a result of thermal cycling are observed in vanadium dioxide of stoichiometric composition. According to the results of XPS spectra, it was determined that V 4+ oxide predominates in the surface layer of VO 2 samples, both before and after thermal cycling, and there are also small inclusions of V 5+ oxide.