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Phase inversion of THz radiation from silicon nanostructures
The experimental data of the optical and electric features of the silicon nanosandwiches obtained by silicon planar technology in the frameworks of the Hall geometry are presented. Silicon nanosandwiches represent the ultra-shallow silicon quantum wells of 2nm wide that are confined by δ-barriers he...
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Published in: | Journal of physics. Conference series 2019-10, Vol.1326 (1), p.12005 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The experimental data of the optical and electric features of the silicon nanosandwiches obtained by silicon planar technology in the frameworks of the Hall geometry are presented. Silicon nanosandwiches represent the ultra-shallow silicon quantum wells of 2nm wide that are confined by δ-barriers heavily doped with boron, which appear to be used as the phase invertors and modulators of optical THz spectra and electric signals. The negative-U dipole boron centers formation, which appear to confine the edge channels, results in the effective mass dropping and corresponding reduction of the electron-electron interaction thereby giving rise to the macroscopic quantum phenomena at high temperatures up to room temperature. The modulation phase shift of the THz electroluminescence spectrum and phase control of the longitudinal conductance are observed by changing either the magnitude of the source-drain current or the voltage applied to the external gates of the silicon nanosandwiches within the quantum Faraday effect. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/1326/1/012005 |