Novel Insulator Isolated Si NW Sensors Fabricated using Bulk Substrate with Low-cost and High-quality

In this paper, insulator isolated Si NW array were fabricated using self-allied spacer image transfer (SIT), multi-step time division multiplexing (TDM) etching and linear oxidation processes. The insulator isolated Si NWs owe a pentagonal shape, well single crystal morphology and high nanowire qual...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-09, Vol.1622 (1), p.12037
Main Authors: Zhang, Qingzhu, Liu, Ruonan, Tu, Hailing, Tang, Siqi, Yan, Jiang, Li, Bo, Zhang, Jing, Zhang, Zhaohao, Wei, Qianhui, Yin, Huaxiang
Format: Article
Language:English
Subjects:
Crystal morphology
Electron beams
Low cost
Nanowires
Oxidation
Physics
Sensor arrays
Sensors
Silicon substrates
Single crystals
Time division multiplexing
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Summary:In this paper, insulator isolated Si NW array were fabricated using self-allied spacer image transfer (SIT), multi-step time division multiplexing (TDM) etching and linear oxidation processes. The insulator isolated Si NWs owe a pentagonal shape, well single crystal morphology and high nanowire quality. The fabricated Si NW array were used to fabricate insulator isolated Si NW sensors. The low-cost insulator isolated Si NW sensor fabricated from bulk silicon substrates exhibits a linearly variation of current response to the laser at this wavelength, exhibiting good repeatability and the prospect of replacing SOI materials. The proposed approach of Si NW materials and sensors fabrication realizes the high efficiency, low cost and small fluctuation of Si NW pattern and device preparation, overcoming the problems of low efficiency for e-beam lithography and the difficulty of large-scale array formation.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1622/1/012037