Optical and photoelectric characteristics of the ZnS / por-Si / Si structure performed by different technological routes

The research object is multilayer photosensitive structures with a porous silicon working layer and a semiconductor zinc sulphide. The purpose of this work is to study the effect of the zinc sulphide coating thickness on the structure optical properties. The reflection and photosensitivity spectral...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12001
Main Authors: Lizunkova, D A, Shishkin, I A, Latukhina, N V
Format: Article
Language:English
Subjects:
Micrometers
Multilayers
Optical properties
Photoelectricity
Photosensitivity
Physics
Porous silicon
Thickness
Zinc coatings
Zinc sulfide
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Summary:The research object is multilayer photosensitive structures with a porous silicon working layer and a semiconductor zinc sulphide. The purpose of this work is to study the effect of the zinc sulphide coating thickness on the structure optical properties. The reflection and photosensitivity spectral characteristics of structures with various thicknesses zinc sulphide coating were studied. It was shown that the optimal coating thickness is 0.056 micrometers.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012001