Anomalous Nernst-Ettingshausen effect in diluted magnetic semiconductors

The magnetic field dependences of the Hall and Nernst-Ettingshausen effects in (In, Fe)Sb, (Ga, Fe)Sb, (Ga, Mn)As diluted magnetic semiconductors were investigated. The samples were fabricated on a semi-insulating GaAs substrates by pulsed laser deposition in vacuum. The manifestation of the anomalo...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-12, Vol.1695 (1), p.12145
Main Authors: Kuznetsov, Y, Dorokhin, M, Kudrin, A., Ved, M, Lesnikov, V
Format: Article
Language:English
Subjects:
Antimony
Dilution
Ettingshausen effect
Ferromagnetism
Gallium
Hall effect
Magnetic fields
Magnetic semiconductors
Magnetism
Manganese
Nernst-Ettingshausen effect
Physics
Pulsed laser deposition
Pulsed lasers
Semiconductors
Substrates
Thermomagnetic effects
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Summary:The magnetic field dependences of the Hall and Nernst-Ettingshausen effects in (In, Fe)Sb, (Ga, Fe)Sb, (Ga, Mn)As diluted magnetic semiconductors were investigated. The samples were fabricated on a semi-insulating GaAs substrates by pulsed laser deposition in vacuum. The manifestation of the anomalous Nernst-Ettingshausen effect along with the anomalous Hall effect in manganese-containing structures was shown experimentally. It is demonstrated that the difference in the magnetic field dependences of the Hall and Nernst-Ettingshausen effects in systems with Mn and Fe is due to the different nature of ferromagnetism.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1695/1/012145