Effect of Thermal Annealing on the Electrical Properties and Gas Sensing for Pulsed Laser Deposition Cr 2 O 3 Thin Films

In this study, a double frequency Nd: YAG deposited by Pulsed Laser Deposition (laser beam 1064 nm, 6 Hz repetition rate and 10 ns pulse duration) were used for a thin Cr 2 O 3 deposit on glass substrate. Many growth parameters have been considered to specify the optimum condition, namely substrate...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-03, Vol.1829 (1), p.12020
Main Authors: Kaleel, Souad G, Suhail, Mahdi H, Kamil, Hawraa
Format: Article
Language:English
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Summary:In this study, a double frequency Nd: YAG deposited by Pulsed Laser Deposition (laser beam 1064 nm, 6 Hz repetition rate and 10 ns pulse duration) were used for a thin Cr 2 O 3 deposit on glass substrate. Many growth parameters have been considered to specify the optimum condition, namely substrate temperature at room temperature, oxygen pressure (2.8×10-4 mbar), laser energy (600) mJ and the number of laser shots was 500 pulses. The thickness was of about 160 nm and annealing temperature at (300, 400 and 500) °C. Using DC method, the conductivity and Hall coefficient of Cr 2 O 3 films were measured. The sensing properties of the p-type (Hall coefficient was positive) films for NO 2 gas have been studied, and the result revealed that the Cr 2 O 3 films have low sensitivity at room temperature, and it’s improved by increasing the annealing temperature to 500° C.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1829/1/012020