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Effect of interface state trap density on the performance of scaled surface channel In 0.3 Ga 0.7 As MOSFETs

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Bibliographic Details
Published in:	Journal of physics. Conference series 2009-11, Vol.193, p.12122
Main Authors:	Benbakhti, B, Ayubi-Moak, J S, Kalna, K, Asenov, A
Format:	Article
Language:	English
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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