Germanium arsenide nanosheets applied as two-dimensional field emitters

The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer G...

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Bibliographic Details
Published in:Journal of physics. Conference series 2021-10, Vol.2047 (1), p.12021
Main Authors: Giubileo, F, Grillo, A, Pelella, A, Faella, E, Camilli, L, Sun, J B, Capista, D, Passacantando, M, Di Bartolomeo, A
Format: Article
Language:English
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Summary:The IV–V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope. We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 10 2 Vµm -1 , and field enhancement factor of about 70.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2047/1/012021